From Sand to Superintelligence · Drill cards · Chapter 18
Drills
The Transistor as a Valve
10 atomic recall cards. Export to Anki and let spaced repetition do its slow work.
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| Front | Back |
|---|---|
| What does MOSFET stand for? | Metal-oxide-semiconductor field-effect transistor. |
| What are the four physical regions of a MOSFET? | Source, channel, drain, and gate. |
| What is the doping type of the source and drain vs. the channel in an n-channel MOSFET? | Source and drain are heavily n-doped (full of free electrons); the channel between them is p-doped (full of holes, empty of free electrons). |
| What is the approximate threshold voltage of a modern MOSFET? | Around 0.4–0.7 V. |
| How thick is the gate oxide in a leading-edge MOSFET? | Roughly 1 nm — about three atoms of silicon dioxide stacked on top of each other. |
| How fast does a modern MOSFET switch? | Around 1 picosecond (10⁻¹² seconds). |
| How much energy does it take to flip a modern transistor once? | Around 10⁻¹· joules — small enough to flip it a hundred trillion times on the energy of a single calorie. |
| How many transistors are in a single Rubin GPU package? | On the order of 336 billion. |
| What is the approximate gate length (channel length) in a leading-edge node? | Around 15 nanometers, even though the node is marketed as “3 nm” or “2 nm” — the naming convention is now marketing, not measurement. |
| What did the FinFET solve that the planar MOSFET could not below 22 nm? | The gate could no longer control the channel in a planar design; electrons leaked when the transistor was off. FinFET wraps the gate around three sides of a vertical fin for better electrostatic grip. |