From Sand to Superintelligence · Drill cards · Chapter 07
Drills
Painting with Atoms
10 atomic recall cards. Export to Anki and let spaced repetition do its slow work.
In Anki: File → Import, choose this TSV, set field separator to Tab, deck = Sand to Silicon · Ch 07, note type = Basic.
| Front | Back |
|---|---|
| What does 'thin-film deposition' refer to in chip manufacturing? | The discipline of growing controlled films of material — insulators, metals, semiconductors — onto the wafer surface with precise thickness and composition. |
| To what approximate pressure does a deposition chamber evacuate? | ~10⁻⁶ torr — about a billionth of atmospheric pressure. |
| What does the wafer sit on inside a deposition chamber? | A heated chuck, often called a susceptor. |
| In PVD, what mechanism knocks atoms off the target? | Argon ions from a plasma slam into the solid target (the sputtering target), knocking atoms loose. |
| Why is PVD called 'line-of-sight' deposition? | Atoms travel in straight lines from target to wafer; they cannot coat the bottoms of high-aspect-ratio trenches. |
| What precursor gas does CVD use to deposit silicon? | Silane (SiH₄). |
| What makes CVD conformal where PVD is not? | CVD deposition is mediated by gas-phase chemistry, so precursors flow into recesses equally well on horizontal and vertical surfaces. |
| Describe the ALD cycle sequence. | Pulse precursor A (surface saturates), purge, pulse precursor B (reacts to form one monolayer), purge — repeat. |
| What film is grown by ALD using hafnium and water-vapor precursors? | HfO₂ — hafnium oxide, used as a high-k gate dielectric. |
| Why is ALD slow, and roughly how long does a single high-quality ALD film take? | Because it deposits exactly one atomic layer per cycle; a single high-quality film can take an hour. |