From Sand to Superintelligence · Drill cards · Chapter 04
Drills
Growing a Perfect Crystal
10 atomic recall cards. Export to Anki and let spaced repetition do its slow work.
In Anki: File → Import, choose this TSV, set field separator to Tab, deck = Sand to Silicon · Ch 04, note type = Basic.
| Front | Back |
|---|---|
| What is the melting point of silicon? | 1,414°C. |
| Who invented the crystal-pulling technique, and in what year? | Jan Czochralski, in 1916 — by accident, when he dipped his pen into molten tin instead of his inkwell. |
| What material is the crucible that holds molten silicon made from? | High-purity SiO₂ (quartz) — the same Spruce Pine quartz discussed in Chapter 1. |
| Why is the Cz chamber backfilled with argon before the melt? | To protect the molten silicon from oxygen, which would contaminate it. |
| What is the approximate pull rate of the seed crystal during Czochralski growth? | About 1 mm per minute. |
| What happens to the crucible while the seed rod is pulled upward? | It counter-rotates — rotating in the opposite direction — to keep the temperature gradient symmetric and impurity distribution uniform. |
| How large and how heavy is a finished 300 mm Cz ingot? | About 300 mm in diameter, over a meter long, and weighing roughly 200 kg — about as much as a small motorcycle. |
| How many grain boundaries does a completed Cz ingot contain, end to end? | Zero. It is a single crystal across roughly 10²⁵ atoms. |
| What environmental disturbance can ruin a boule during pulling? | Vibration — even a passing truck on the road outside. |
| For what two applications is float-zone silicon preferred over Czochralski silicon? | Power electronics and certain detector-grade silicon, where the highest purity is required and large diameters are not needed. |